TOSHIBA · FETs & Power MOSFETs · MPN TK110P10PL,RQ(S2
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| Gate Charge(Qg) | 33nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 40A |
| Output Capacitance(Coss) | 310pF |
| Gate Threshold Voltage (Vgs(th)) | 1.5V;2.5V |
| Pd - Power Dissipation | 75W |
| RDS(on) | 8.9mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.04nF |
| Type | N-Channel |
100V 40A 75W 8.9mΩ@10V 1 N-channel N-Channel TO-252-2(DPAK) Single FETs, MOSFETs RoHS