TOSHIBA TK110P10PL,RQ

TOSHIBA · FETs & Power MOSFETs · MPN TK110P10PL,RQ

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Specifications

Gate Charge(Qg)33nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)40A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss@Vds)22pF
RDS(on)10.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.04nF

Technical details

100V 40A 2.5V 75W 10.6mΩ@10V 1 N-channel DPAK Single FETs, MOSFETs RoHS

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