TOSHIBA · FETs & Power MOSFETs · MPN TK110E65Z,S1X
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| Gate Charge(Qg) | 40nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 24A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 190W |
| RDS(on) | 110mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.25nF |
650V 24A 4V 190W 110mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS