TOSHIBA · FETs & Power MOSFETs · MPN TK110A10PL,S4X
No reviews yet — be the first to review TOSHIBA TK110A10PL,S4X.
| Gate Charge(Qg) | 33nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 36A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 36W |
| RDS(on) | 10.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.04nF |
100V 36A 2.5V 36W 10.8mΩ@10V 1 N-channel TO-220SIS Single FETs, MOSFETs RoHS