TOSHIBA · FETs & Power MOSFETs · MPN TK10V60W,LVQ
No reviews yet — be the first to review TOSHIBA TK10V60W,LVQ.
| Gate Charge(Qg) | 20nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 20pF |
| Current - Continuous Drain(Id) | 9.7A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 3.7V |
| Pd - Power Dissipation | 83.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.3pF |
| RDS(on) | 380mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 700pF |
600V 9.7A 3.7V 83.3W 380mΩ@10V 1 N-channel DFN-4-EP(8x8) Single FETs, MOSFETs RoHS