TOSHIBA · FETs & Power MOSFETs · MPN TK10J80E,S1E
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| Drain to Source Voltage | 800V |
|---|---|
| Gate Charge(Qg) | 46nC@10V |
| Current - Continuous Drain(Id) | 10A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 250W |
| RDS(on) | 1Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2nF |
800V 10A 4V 250W 1Ω@10V 1 N-channel TO-3P(N) Single FETs, MOSFETs RoHS