TOSHIBA · FETs & Power MOSFETs · MPN TK10E80W,S1X
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| Gate Charge(Qg) | 19nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Output Capacitance(Coss) | 27pF |
| Current - Continuous Drain(Id) | 9.5A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 130W |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF |
| RDS(on) | 550mΩ@10V |
| Input Capacitance(Ciss) | 1.15nF |
| Type | N-Channel |
800V 9.5A 4V 130W 550mΩ@10V N-Channel TO-220 Single FETs, MOSFETs RoHS