TOSHIBA · FETs & Power MOSFETs · MPN TK10A80W,S4X
No reviews yet — be the first to review TOSHIBA TK10A80W,S4X.
| Gate Charge(Qg) | 19nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 9.5A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 40W |
| RDS(on) | 550mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.15nF |
800V 9.5A 4V 40W 550mΩ@10V 1 N-channel TO-220SIS Single FETs, MOSFETs RoHS