TOSHIBA · FETs & Power MOSFETs · MPN TK10A80E,S4X(S
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| Gate Charge(Qg) | 46nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Output Capacitance(Coss) | 150pF |
| Current - Continuous Drain(Id) | 10A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V;4V |
| Pd - Power Dissipation | 50W |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| RDS(on) | 700mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2nF |
| Type | N-Channel |
N-Channel 800V Through Hole TO-220SIS