TOSHIBA TK10A60W,S4X

TOSHIBA · FETs & Power MOSFETs · MPN TK10A60W,S4X

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Specifications

Output Capacitance(Coss)20pF
Pd - Power Dissipation30W
Configuration-
Gate Charge(Qg)20nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)9.7A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))3.7V
Reverse Transfer Capacitance (Crss@Vds)2.3pF
RDS(on)380mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)720pF

Technical details

30W 600V 9.7A 3.7V 380mΩ@10V 1 N-channel N-Channel TO-220SIS Single FETs, MOSFETs RoHS

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