TOSHIBA · FETs & Power MOSFETs · MPN TK10A60W,S4VX(M
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| Output Capacitance(Coss) | 20pF |
|---|---|
| Pd - Power Dissipation | 30W |
| Configuration | - |
| Drain to Source Voltage | 600V |
| Gate Charge(Qg) | 20nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Reverse Transfer Capacitance (Crss@Vds) | 2.3pF |
| RDS(on) | 327mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 700pF |
30W 600V 2.7V 327mΩ@10V 1 N-channel N-Channel TO-220SIS Single FETs, MOSFETs RoHS