TOSHIBA · FETs & Power MOSFETs · MPN TK10A60W
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| Gate Charge(Qg) | 20nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 9.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 30W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.3pF |
| RDS(on) | 327mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 700pF |
600V 9.7A 30W 327mΩ@10V 1 N-channel TO-220F-3 Single FETs, MOSFETs RoHS