TOSHIBA · FETs & Power MOSFETs · MPN TK100S04N1L,LXHQ
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| Output Capacitance(Coss) | 3nF |
|---|---|
| Pd - Power Dissipation | 180W |
| Configuration | - |
| Gate Charge(Qg) | 76nC@10V |
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 220pF |
| RDS(on) | 1.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.49nF |
180W 40V 100A 2.5V 1.9mΩ@10V 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS