TOSHIBA · FETs & Power MOSFETs · MPN TK100E10N1,S1X
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| Gate Charge(Qg) | 140nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 1.5nF |
| Current - Continuous Drain(Id) | 100A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 255W |
| Reverse Transfer Capacitance (Crss@Vds) | 63pF |
| RDS(on) | 3.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.8nF |
| Vgs | ±20V |
N-Channel 100V 100A 255W Through Hole TO-220