TOSHIBA · FETs & Power MOSFETs · MPN TK100E06N1,S1X(S
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| Gate Charge(Qg) | 140nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 3.5nF |
| Current - Continuous Drain(Id) | 100A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 255W |
| RDS(on) | 1.9mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10.5nF |
| Type | N-Channel |
N-Channel 60V Through Hole TO-220