TOSHIBA · FETs & Power MOSFETs · MPN TK100A08N1,S4X
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| Gate Charge(Qg) | 130nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 100A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 45W |
| RDS(on) | 3.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9nF |
80V 100A 4V 45W 3.2mΩ@10V 1 N-channel TO-220SIS Single FETs, MOSFETs RoHS