TOSHIBA · FETs & Power MOSFETs · MPN TK100A06N1,S4X
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 140nC@10V |
| Current - Continuous Drain(Id) | 100A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | - |
| RDS(on) | 2.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10.5nF |
60V 100A 4V 2.7mΩ@10V 1 N-channel TO-220SIS Single FETs, MOSFETs RoHS