TOSHIBA · FETs & Power MOSFETs · MPN TK099V65Z,LQ
No reviews yet — be the first to review TOSHIBA TK099V65Z,LQ.
| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 47nC@10V |
| Output Capacitance(Coss) | 63pF |
| Current - Continuous Drain(Id) | 30A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 230W |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF |
| RDS(on) | 99mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.78nF |
| Type | N-Channel |
650V 30A 4V 230W 99mΩ@10V 1 N-channel N-Channel DFN-5(8x8) Single FETs, MOSFETs RoHS