TOSHIBA · FETs & Power MOSFETs · MPN TK090A65Z,S4X
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| Gate Charge(Qg) | 47nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 30A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 45W |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.78nF |
650V 30A 4V 45W 1 N-channel TO-220SIS Single FETs, MOSFETs RoHS