TOSHIBA · FETs & Power MOSFETs · MPN TK065N65Z,S1F
No reviews yet — be the first to review TOSHIBA TK065N65Z,S1F.
| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 62nC@10V |
| Current - Continuous Drain(Id) | 38A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 270W |
| RDS(on) | 65mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.65nF |
650V 38A 4V 270W 65mΩ@10V 1 N-channel TO-247 Single FETs, MOSFETs RoHS