TOSHIBA · FETs & Power MOSFETs · MPN TK040Z65Z,S1F
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| Gate Charge(Qg) | 105nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 57A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 360W |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.25nF |
650V 57A 4V 360W 1 N-channel TO-247-4L Single FETs, MOSFETs RoHS