TOSHIBA TJ90S04M3L,LQ

TOSHIBA · FETs & Power MOSFETs · MPN TJ90S04M3L,LQ

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)172nC@10V
Output Capacitance(Coss)990pF
Current - Continuous Drain(Id)90A
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation180W
Reverse Transfer Capacitance (Crss@Vds)825pF
RDS(on)3.4mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)7.7nF
TypeP-Channel

Technical details

P-Channel 40V 90A 180W Surface Mount DPAK

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