TOSHIBA TJ8S06M3L(T6L1,NQ)

TOSHIBA · FETs & Power MOSFETs · MPN TJ8S06M3L(T6L1,NQ)

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Specifications

Output Capacitance(Coss)100pF
Pd - Power Dissipation27W
Configuration-
Gate Charge(Qg)19nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Reverse Transfer Capacitance (Crss@Vds)60pF
RDS(on)104mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)890pF

Technical details

27W 60V 8A 2V 104mΩ@10V 1 P-Channel P-Channel DPAK Single FETs, MOSFETs RoHS

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