TOSHIBA TJ80S04M3L(T6L1,NQ

TOSHIBA · FETs & Power MOSFETs · MPN TJ80S04M3L(T6L1,NQ

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Specifications

Gate Charge(Qg)158nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)970pF
Current - Continuous Drain(Id)80A
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)740pF
RDS(on)5.2mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)7.77nF
TypeP-Channel

Technical details

P-Channel 40V 80A 100W Surface Mount DPAK

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