TOSHIBA TJ60S06M3L,LXHQ

TOSHIBA · FETs & Power MOSFETs · MPN TJ60S06M3L,LXHQ

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)156nC@10V
Current - Continuous Drain(Id)60A
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation100W
RDS(on)8.6mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)7.76nF
TypeP-Channel

Technical details

P-Channel 60V 60A 100W Surface Mount DPAK

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