TOSHIBA · FETs & Power MOSFETs · MPN TJ60S04M3L(T6L1,NQ
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| Gate Charge(Qg) | 125nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 780pF |
| Current - Continuous Drain(Id) | 60A |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 90W |
| Reverse Transfer Capacitance (Crss@Vds) | 570pF |
| RDS(on) | 6.3mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 6.51nF |
| Vgs | ±20V |
P-Channel 40V 60A 90W Surface Mount DPAK