TOSHIBA · FETs & Power MOSFETs · MPN TJ50S06M3L,LXHQ
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 124nC@10V |
| Current - Continuous Drain(Id) | 50A |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 90W |
| RDS(on) | 13.8mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 6.29nF |
| Type | P-Channel |
P-Channel 60V 50A Surface Mount DPAK