TOSHIBA · FETs & Power MOSFETs · MPN TJ20S04M3L(T6L1,NQ
No reviews yet — be the first to review TOSHIBA TJ20S04M3L(T6L1,NQ.
| Gate Charge(Qg) | 37nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 20A |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 41W |
| RDS(on) | 22.2mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.85nF |
40V 20A 41W 22.2mΩ@10V 1 P-Channel DPAK Single FETs, MOSFETs RoHS