TOSHIBA · FETs & Power MOSFETs · MPN TJ20S04M3L,LXHQ
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| Gate Charge(Qg) | 37nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 20A |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 41W |
| RDS(on) | 22.2mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.85nF |
40V 20A 3V 41W 22.2mΩ@10V 1 P-Channel DPAK Single FETs, MOSFETs RoHS