TOSHIBA · FETs & Power MOSFETs · MPN TJ10S04M3L(T6L1,NQ
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| Gate Charge(Qg) | 19nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 10A |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 27W |
| RDS(on) | 44mΩ@10V |
| Type | P-Channel |
40V 10A 3V 27W 44mΩ@10V P-Channel DPAK Single FETs, MOSFETs RoHS