TOSHIBA TJ10S04M3L,LXHQ

TOSHIBA · FETs & Power MOSFETs · MPN TJ10S04M3L,LXHQ

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Specifications

Gate Charge(Qg)19nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)10A
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation27W
RDS(on)-
Number1 P-Channel
Input Capacitance(Ciss)930pF

Technical details

40V 10A 3V 27W 1 P-Channel DPAK Single FETs, MOSFETs RoHS

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