TOSHIBA · FETs & Power MOSFETs · MPN SSM6P816R,LF
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| Current - Continuous Drain(Id) | 6A |
|---|---|
| Pd - Power Dissipation | 1.4W |
| RDS(on) | 52.3mΩ@1.8V |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 20V |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 94pF |
| Input Capacitance(Ciss) | 1.03nF |
| Gate Charge(Qg) | 16.6nC@4.5V |
| Output Capacitance(Coss) | 113pF |
6A 1.4W 52.3mΩ@1.8V 1V TSOP-6-F FET, MOSFET Arrays RoHS