TOSHIBA SSM6P35AFE,LF

TOSHIBA · FETs & Power MOSFETs · MPN SSM6P35AFE,LF

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Specifications

Current - Continuous Drain(Id)250mA
RDS(on)20Ω@1.2V
Pd - Power Dissipation250mW
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage20V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number2 P-Channel
Input Capacitance(Ciss)42pF
Gate Charge(Qg)-
Operating Temperature-
Output Capacitance(Coss)-

Technical details

250mA 20Ω@1.2V 250mW 1V 2 P-Channel SOT-563(SOT-666) FET, MOSFET Arrays RoHS

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