TOSHIBA · FETs & Power MOSFETs · MPN SSM6N815R,LF
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| Current - Continuous Drain(Id) | 2A |
|---|---|
| RDS(on) | 180mΩ@4V |
| Pd - Power Dissipation | 1.8W |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 100V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 290pF |
| Gate Charge(Qg) | 3.1nC@4.5V |
| Operating Temperature | - |
| Output Capacitance(Coss) | 108pF |
N-Channel Array 100V 2A 1.8W TSOP-6F