TOSHIBA · FETs & Power MOSFETs · MPN SSM6N67NU,LF
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| Current - Continuous Drain(Id) | 4A |
|---|---|
| RDS(on) | 82mΩ@1.8V |
| Pd - Power Dissipation | 2W |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| Number | - |
| Input Capacitance(Ciss) | 310pF |
| Gate Charge(Qg) | 3.2nC@4.5V |
| Operating Temperature | - |
| Output Capacitance(Coss) | 52pF |
4A 82mΩ@1.8V 2W 1V UDFN-6(2x2) FET, MOSFET Arrays RoHS