TOSHIBA · FETs & Power MOSFETs · MPN SSM6N62TU,LF
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| Current - Continuous Drain(Id) | 800mA |
|---|---|
| Pd - Power Dissipation | 500mW |
| RDS(on) | 67mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 600mV |
| Drain to Source Voltage | 20V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 177pF |
| Gate Charge(Qg) | 2nC@4.5V |
| Output Capacitance(Coss) | 52pF |
800mA 500mW 67mΩ@4.5V 600mV 2 N-Channel UF6 FET, MOSFET Arrays RoHS