TOSHIBA SSM6N58NU,LF

TOSHIBA · FETs & Power MOSFETs · MPN SSM6N58NU,LF

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Specifications

Current - Continuous Drain(Id)4A
RDS(on)180mΩ@1.8V
Pd - Power Dissipation1W
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)13pF
Number2 N-Channel
Input Capacitance(Ciss)129pF
Gate Charge(Qg)1.8nC@4.5V
Operating Temperature-50℃~+150℃
Output Capacitance(Coss)34pF

Technical details

N-Channel Array 30V 4A 1W Surface Mount UDFN-6(2x2)

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