TOSHIBA · FETs & Power MOSFETs · MPN SSM6N58NU,LF
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| Current - Continuous Drain(Id) | 4A |
|---|---|
| RDS(on) | 180mΩ@1.8V |
| Pd - Power Dissipation | 1W |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 129pF |
| Gate Charge(Qg) | 1.8nC@4.5V |
| Operating Temperature | -50℃~+150℃ |
| Output Capacitance(Coss) | 34pF |
N-Channel Array 30V 4A 1W Surface Mount UDFN-6(2x2)