TOSHIBA · FETs & Power MOSFETs · MPN SSM6N57NU,LF
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| Current - Continuous Drain(Id) | 4A |
|---|---|
| RDS(on) | 82mΩ@1.8V |
| Pd - Power Dissipation | 1W |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 30V |
| Number | - |
| Input Capacitance(Ciss) | 310pF |
| Gate Charge(Qg) | - |
| Operating Temperature | - |
4A 82mΩ@1.8V 1W 1V UDFN-6(2x2) FET, MOSFET Arrays RoHS