TOSHIBA · FETs & Power MOSFETs · MPN SSM6N56FE,LM
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| Current - Continuous Drain(Id) | 800mA |
|---|---|
| Pd - Power Dissipation | 250mW |
| RDS(on) | 840mΩ@1.5V |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 20V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 55pF |
| Gate Charge(Qg) | 1nC@4.5V |
| Operating Temperature | - |
| Output Capacitance(Coss) | 16pF |
N-Channel Array 20V 800mA 250mW Surface Mount SOT-563(SOT-666)