TOSHIBA · FETs & Power MOSFETs · MPN SSM6N35FE,LM
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| Current - Continuous Drain(Id) | 180mA |
|---|---|
| RDS(on) | 20Ω@1.2V |
| Pd - Power Dissipation | 150mW |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 20V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | - |
| Operating Temperature | - |
| Output Capacitance(Coss) | - |
180mA 20Ω@1.2V 150mW 1V 2 N-Channel SOT-563(SOT-666) FET, MOSFET Arrays RoHS