TOSHIBA · FETs & Power MOSFETs · MPN SSM6N35AFU,LF
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| Current - Continuous Drain(Id) | 250mA |
|---|---|
| Pd - Power Dissipation | 285mW |
| RDS(on) | 9Ω@1.2V |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 20V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | - |
| Input Capacitance(Ciss) | 36pF |
| Gate Charge(Qg) | 340pC@4.5V |
| Operating Temperature | - |
| Output Capacitance(Coss) | - |
250mA 285mW 9Ω@1.2V 1V TSSOP-6(SC-88)SOT-363 FET, MOSFET Arrays RoHS