TOSHIBA SSM6N35AFE,LF

TOSHIBA · FETs & Power MOSFETs · MPN SSM6N35AFE,LF

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Specifications

Current - Continuous Drain(Id)250mA
RDS(on)9Ω@1.2V
Pd - Power Dissipation250mW
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage20V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)10pF
Number2 N-Channel
Input Capacitance(Ciss)36pF
Gate Charge(Qg)340pC@4.5V
Operating Temperature-
Output Capacitance(Coss)12pF

Technical details

N-Channel 20V 250mA 250mW Surface Mount SOT-563(SOT-666)

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