TOSHIBA · FETs & Power MOSFETs · MPN SSM6L820R,LXHF
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| Current - Continuous Drain(Id) | 4A |
|---|---|
| Pd - Power Dissipation | 1.8W |
| RDS(on) | 157mΩ@1.8V |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Drain to Source Voltage | 30V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 76pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 480pF |
| Gate Charge(Qg) | 6.7nC@4.5V |
| Operating Temperature | - |
| Output Capacitance(Coss) | 90pF |
4A 1.8W 157mΩ@1.8V 1.2V 1 N-Channel + 1 P-Channel TSOP-6-F FET, MOSFET Arrays RoHS