TOSHIBA · FETs & Power MOSFETs · MPN SSM6L61NU,LF
No reviews yet — be the first to review TOSHIBA SSM6L61NU,LF.
| Current - Continuous Drain(Id) | 4A |
|---|---|
| Pd - Power Dissipation | 1W |
| RDS(on) | 25mΩ@4.5V;44mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 1V;1.2V |
| Drain to Source Voltage | 20V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF;76pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 410pF;480pF |
| Gate Charge(Qg) | 3.6nC@4.5V;6.74nC@4.5V |
| Output Capacitance(Coss) | 85pF;90pF |
4A 1W 1 N-Channel + 1 P-Channel UDFN6 FET, MOSFET Arrays RoHS