TOSHIBA SSM6L36FE,LM

TOSHIBA · FETs & Power MOSFETs · MPN SSM6L36FE,LM

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Specifications

Current - Continuous Drain(Id)500mA;330mA
RDS(on)460mΩ@5V;950mΩ@4.5V
Pd - Power Dissipation150mW
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage20V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)7.3pF;6.1pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)46pF;43pF
Gate Charge(Qg)1.23nC@4V;1.2nC@4V
Output Capacitance(Coss)10.8pF;10.3pF

Technical details

N-Channel+P-Channel Array 20V 500mA 330mA 150mW Surface Mount SOT-563

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