TOSHIBA · FETs & Power MOSFETs · MPN SSM6L35FU(TE85L,F)
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| Current - Continuous Drain(Id) | 180mA |
|---|---|
| RDS(on) | 44Ω@1.2V |
| Pd - Power Dissipation | 200mW |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 20V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 4.1pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 9.5pF |
| Gate Charge(Qg) | - |
| Operating Temperature | - |
| Output Capacitance(Coss) | 9.5pF |
N-Channel+P-Channel Array 20V 180mA 200mW Surface Mount TSSOP-6(SC-88)SOT-363