TOSHIBA · FETs & Power MOSFETs · MPN SSM6L35FE,LM
No reviews yet — be the first to review TOSHIBA SSM6L35FE,LM.
| Current - Continuous Drain(Id) | 180mA |
|---|---|
| RDS(on) | 3Ω@4V |
| Pd - Power Dissipation | 150mW |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 20V |
| Type | N-Channel + P-Channel |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 9.5pF |
| Operating Temperature | - |
180mA 3Ω@4V 150mW 1V 1 N-Channel + 1 P-Channel SOT-563(SOT-666) FET, MOSFET Arrays RoHS