TOSHIBA · FETs & Power MOSFETs · MPN SSM6K819R,LF
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 8.5nC@4.5V |
| Current - Continuous Drain(Id) | 10A |
| Output Capacitance(Coss) | 375pF |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 3W |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| RDS(on) | 36.4mΩ@10V |
| Input Capacitance(Ciss) | 1.11nF |
| Type | N-Channel |
100V 10A 2.5V 3W 36.4mΩ@10V N-Channel TSOP-6-F Single FETs, MOSFETs RoHS