TOSHIBA · FETs & Power MOSFETs · MPN SSM6K810R,LF
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| Gate Charge(Qg) | 3.2nC@4.5V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 3.5A |
| Output Capacitance(Coss) | 160pF |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 1.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF |
| RDS(on) | 51mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 430pF |
| Type | N-Channel |
100V 3.5A 2.5V 1.5W 51mΩ@10V 1 N-channel N-Channel TSOP-6F Single FETs, MOSFETs RoHS