TOSHIBA SSM6K217FE,LF

TOSHIBA · FETs & Power MOSFETs · MPN SSM6K217FE,LF

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Specifications

Gate Charge(Qg)1.1nC@4.2V
Drain to Source Voltage40V
Output Capacitance(Coss)26pF
Current - Continuous Drain(Id)1.8A
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)7.5pF
RDS(on)195mΩ@8V
Number1 N-channel
Input Capacitance(Ciss)130pF
TypeN-Channel

Technical details

N-Channel 40V 1.8A 500mW Surface Mount SOT-563(SOT-666)

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